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| CXT2907A SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. SOT-89 CASE MAXIMUM RATINGS (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA 60 60 5.0 600 1.2 -65 to +150 104 UNITS V V V mA W C C/W ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125C VCE=30V, VBE=0.5V IC=10mA IC=10mA IE=10mA IC=150mA, IC=500mA, IB=15mA IB=50mA MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 300 R3 ( 19-December 2001) UNITS nA A nA V V V V V V V IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA Central TM CXT2907A SURFACE MOUNT PNP SILICON TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS (Continued) SYMBOL hFE fT Cob Cib ton td tr toff ts tf TEST CONDITIONS VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, IB1=15mA IB1=15mA MIN 50 200 8.0 30 45 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns MAX UNITS IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA SOT-89 CASE - MECHANICAL OUTLINE A B E F G H 1 C J L M 2 K R3 3 BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE R3 ( 19-December 2001) |
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